PBSS4032PZ,115 datasheet

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• Маркировка
  PBSS4032PZ,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBSS4032PZ,115 Current - Collector (ic) (max): 4.4A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 130MHz Lead Free Status / Rohs Status: Lead free / RoHS Compliant Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Power - Max: 2W Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 400mV @ 200mA, 4A Voltage - Collector Emitter Breakdown (max): 30V RoHS: yes Configuration: Single Transistor Polarity: PNP Collector- Emitter Voltage VCEO Max: - 30 V Emitter- Base Voltage VEBO: - 5 V Gain Bandwidth Product fT: 130 MHz DC Collector/Base Gain hfe Min: 200 Mounting Style: SMD/SMT Continuous Collector Current: - 4.4 A Maximum Power Dissipation: 700 mW Factory Pack Quantity: 1000
• Количество страниц
  15 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  177,62 KB

PBSS4032PZ,115 datasheet скачать

PBSS4032PZ,115 datasheet